| PART |
Description |
Maker |
| M2S56D20ATP M2V56D30ATP-10 M2V56D30ATP-75 M2V56D30 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semicon...
|
| M2S56D40ATP-75L M2S56D40ATP-75AL M2S56D40AKT-75 M2 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D40ATP-75A M2S56D30ATP-10 M2S56D30ATP-10L M2S |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D20TP M2S56D20TP-10 M2S56D20TP-75 M2S56D30TP- |
256M Double Data Rate Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| EDS2732CABH-1A-E EDS2732CABH-1AL-E EDS2732CABH-75L |
256M bits SDRAM (8M words x 32 bits)
GT 25C 25#12 SKT PLUG 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
71-580540-35S
71-580584-05P
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
